Victor Champain: Thermal Susceptibility of Hole Spin Qubits in Silicon

Thermal Susceptibility of Hole Spin Qubits in Silicon

Abstract: Spins in semiconducting materials hold great promise for large-scale quantum computing due to their compactness and compatibility with standard CMOS processes. However, scaling spin-based quantum processors presents a key challenge: maintaining qubit fidelity as system size increases. In state-of-the-art devices, heating effects—primarily caused by dissipation from control pulses—have emerged as a limiting factor. Notably, systematic drifts in the Larmor frequency of spins have been observed following microwave excitations, revealing a complex temperature dependence whose origin remains elusive. In this presentation, I will discuss the fundamental properties of hole-based spin qubits in silicon, with a focus on their spin-orbit interaction. I will examine the thermal susceptibility of hole spins and explore its potential electrical origin. Finally, I will demonstrate how to study dissipation associated with qubit manipulation in quantum dot arrays. These insights are crucial for mitigating thermally induced decoherence in spin-based quantum architectures.

Bio: I am a PhD student under the supervision of Dr. Silvano De Franceschi at CEA Grenoble, France. I obtained my Bachelor's and Master's degrees from École Normale Supérieure de Lyon. My research focuses on hole spin qubits in silicon, with a particular emphasis on their thermal properties. I have developed fast and local thermometry techniques to investigate dissipation in these systems. Additionally, I lead a study on charge and spin readout via longitudinal qubit-photon interaction, offering an alternative to the standard dispersive approach.