Jose Villagomez

Major: Electrical Engineering & Mathematical Science
Mentors: Sean Doan, Professor Galan Moody

DEVELOPMENT OF NIR QUANTUM EMITTERS IN hBN

Hexagonal boron nitride (hBN) color centers are gaining attention as a promising platform for quantum information applications. Compared to other wide bandgap materials like silicon carbide and diamond, hBN offers a significant advantage in its ability to be integrated as atomically thin flakes into optoelectronic and photonic devices using straightforward fabrication techniques. In our research, we are exploring recent advancements in the characterization and site-controlled generation of new types of near-infrared quantum emitters associated with oxygen- and carbon-based defects. These emitters are characterized using photoluminescence spectroscopy. Initial results show these near-infrared emitters are promising candidates for nanoscale site-specific engineering. However, additional characterization is still required.