Engineers improve infrared devices using century-old materials

With a pair of published papers, materials engineers at Stanford University debut a promising approach to using a well-studied semiconductor to improve infrared light-emitting diodes and sensors. 

March 26, 2026
Atomic-resolution image of a PbSnSe thin film transforming between two ordered phases, which changes how light travels through the material. The boundary between the two phases is shown by the dashed line. Credit: Stanford Engineering / Pooja Reddy

Excerpt from Phys Org

After decades of intense research, surprises in the realm of semiconductors—materials used in microchips to control electrical currents—are few and far between. But with a pair of published papers, materials engineers at Stanford University debut a promising approach to using a well-studied semiconductor to improve infrared light-emitting diodes and sensors. They say the approach could lead to smaller, sleeker, and less expensive infrared technologies for environmental, medical, and industrial uses.

"We taught an old dog new tricks," said senior author Kunal Mukherjee, an assistant professor of materials science and engineering at the Stanford School of Engineering, putting the work's importance in perspective. "The so-called IV–VI materials we're working with—lead selenide and lead tin selenide—are more than a hundred years old. They are among the oldest semiconductors historically recorded. We found a way to integrate them with modern technology to produce a new type of infrared diode and to control the infrared light in important ways."

The new diode emits infrared light in a desirable range of longer wavelengths (4,000–5,000 nanometers) good for sensing gas in the air (think greenhouse gases in the sky) or in medical settings (think carbon dioxide meters).

 

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